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CGH35030

RF Transistor by Wolfspeed, A Cree Company | Visit website (67 more products)

Note : Your Quotation Request will be directed to Wolfspeed, A Cree Company.

The CGH35030 is a gallium nitride (GaN) high electron mobility RF Transistor (HEMT). It operates at a frequency between 3300 to 3900 MHz and can provide an output power of up to 30 W. GaN has superior properties when compared to silicon or GaAs - It has a higher breakdown voltage, saturated electron drift velocity and thermal condicitivity. This transistor is available in the form of a bare die.

Product Specifications

  • Part Number
    CGH35030
  • Manufacturer
    Wolfspeed, A Cree Company
  • Description
    30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Wireless Infrastructure
  • Application
    wiMax
  • CW/Pulse
    CW
  • Frequency
    3.3 to 3.9 GHz
  • Power
    36.02 dBm
  • Power(W)
    4 W
  • Peak Output Power
    30 W
  • Small Signal Gain
    10 to 11.5 dB
  • VSWR
    10.00:1
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    120 V
  • Drain Current
    120 mA
  • Package Type
    Flange
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C
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