CGH35060F2/P2 Image

CGH35060F2/P2

RF Transistor by Wolfspeed, A Cree Company | Visit website (67 more products)

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The CGH35060F2/P2 is a gallium nitride (GaN) high electron mobility RF Transistor (HEMT). It operates at a frequency between 3100 to 3500 MHz and can provide an output power of up to 60 W. GaN has superior properties when compared to silicon or GaAs - It has a higher breakdown voltage, saturated electron drift velocity and thermal condicitivity. This transistor is available in the form of a bare die.

Product Specifications

  • Part Number
    CGH35060F2/P2
  • Manufacturer
    Wolfspeed, A Cree Company
  • Description
    60 W, 3100-3500 MHz, 28V, GaN HEMT
  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Aerospace & Defence, Wireless Infrastructure
  • Application
    S Band
  • CW/Pulse
    Pulse
  • Frequency
    3.1 to 3.5 GHz
  • Power
    45.4 to 47.6 dBm
  • Power(W)
    34.67 W
  • Pulsed Width
    300 us
  • Duty_Cycle
    0.1
  • Small Signal Gain
    10 to 13 dB
  • VSWR
    10.00:1
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    120 V
  • Drain Current
    200 mA
  • Package Type
    Flange
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C
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