Note : Your request will be directed to Wolfspeed, A Cree Company.
The CGH35240 is a gallium nitride (GaN) high electron mobility RF Transistor (HEMT). It operates at a frequency between 3100 to 3500 MHz and can provide an output power of up to 240 W. GaN has superior properties when compared to silicon or GaAs - It has a higher breakdown voltage, saturated electron drift velocity and thermal condicitivity. This transistor is available in the form of a bare die.
490 W GaN HEMT Transistor from 2.11 to 2.17 GHz
30 W GaN HEMT from 13.75 to 14.5 GHz for SATCOM Applications
SiGe:C NPN Heterojunction Bipolar Transistor
1250 W GaN Power Transistor from 430 to 450 MHz
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