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The CGH35240 is a gallium nitride (GaN) high electron mobility RF Transistor (HEMT). It operates at a frequency between 3100 to 3500 MHz and can provide an output power of up to 240 W. GaN has superior properties when compared to silicon or GaAs - It has a higher breakdown voltage, saturated electron drift velocity and thermal condicitivity. This transistor is available in the form of a bare die.
DC to 2700 MHz GaN HEMT for Pulsed and CW Applications
2.7 to 3.1 GHz S Band GaN on SiC HEMT Transistor for Avionics
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