CGH35240 Image


Note : Your request will be directed to Wolfspeed, A Cree Company.

The CGH35240 is a gallium nitride (GaN) high electron mobility RF Transistor (HEMT). It operates at a frequency between 3100 to 3500 MHz and can provide an output power of up to 240 W. GaN has superior properties when compared to silicon or GaAs - It has a higher breakdown voltage, saturated electron drift velocity and thermal condicitivity. This transistor is available in the form of a bare die.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    Wolfspeed, A Cree Company
  • Description
    240-W, 3100 to 3500-MHz, 50-ohm Input/Output-Matched, GaN HEMT for S-Band Radar Systems

General Parameters

  • Transistor Type
  • Technology
    GaN on SiC
  • Application Industry
  • Application
    S Band
  • CW/Pulse
  • Frequency
    3.1 to 3.5 GHz
  • Power
    52.55 to 53.98 dBm
  • Power(W)
    250.03 W
  • Pulsed Width
    300 us
  • Duty_Cycle
  • Small Signal Gain
    10.5 to 12 dB
  • VSWR
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    120 V
  • Drain Efficiency
  • Drain Current
    1 A
  • Package Type
  • RoHS
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents

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