CGH40006P Image


RF Transistor by Wolfspeed, A Cree Company (67 more products)

Note : Your Quotation Request will be directed to Wolfspeed, A Cree Company.

The CGH40006P is a gallium nitride (GaN) high electron mobility RF Transistor (HEMT). It operates at a frequency between 0 to 6000 MHz and a gain of 13 dB with a supply voltage of 28 V . This Gan Transistor can provide an output power of up to 6 W GaN has superior properties when compared to silicon or GaAs - It has a higher breakdown voltage, saturated electron drift velocity and thermal condicitivity. This transistor is available in the form of a bare die.

Product Specifications

  • Part Number
  • Manufacturer
    Wolfspeed, A Cree Company
  • Description
    6 W, 28 V, RF Power GaN HEMT General Purpose Broadband Transistor
  • Transistor Type
  • Application Industry
    Radar, UAV, Data Link
  • Application Type
    Broadband Amplifier, Radar, UAV
  • Grade
    Military, Aerospace, Commercial
  • Frequency
    0 to 6000 MHz
  • Gain
    13 dB
  • Power
    6 W
  • Supply Voltage
    28 V
  • Power Added Effeciency
  • Technology
  • Package
    Ceramic, Flanged
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