CGH40006S-AMP1 Image

CGH40006S-AMP1

Note : Your request will be directed to Wolfspeed, A Cree Company.

The CGH40006S-AMP1 from Wolfspeed is an unmatched GaN on SiC High Electron Mobility Transistor (HEMT) that operates up to 6 GHz. It provides a output power of 6 W with a small signal gain of over 11 dB and has an efficiency of up to 65%. The amplifier requires a DC supply of 28 V. It is available in a surface-mount plastic (QFN) package that measures 3 x 3 mm and has been designed for high efficiency, high gain, and wide bandwidth applications including 2-way private radio, broadband amplifiers, cellular infrastructure, test instrumentation, and class A, AB, linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms.

Product Specifications

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Product Details

  • Part Number
    CGH40006S-AMP1
  • Manufacturer
    Wolfspeed, A Cree Company
  • Description
    6 W RF Power GaN HEMT in a Plastic Package

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Cellular
  • Application
    Radio, Broadband Amplifier, Cellular infrastructure, Test Instrumentation
  • Frequency
    DC to 6 GHz
  • Power
    38.39 dBm
  • Power(W)
    6.9 W
  • Small Signal Gain
    10 to 11.8 dB
  • Efficiency
    65 %
  • VSWR
    10:1
  • Class
    Class 1A
  • Supply Voltage
    28 V
  • Feedback Capacitance
    0.1 pF
  • Input Capacitance
    2.7 pF
  • Output Capacitance
    0.8 pF
  • Package Type
    Surface Mount
  • Dimension
    3 mm x 3 mm
  • Grade
    Commercial
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents

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