CGH40045

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CGH40045 Image

The CGH40045 is a gallium nitride (GaN) high electron mobility RF Transistor (HEMT). It operates at a frequency between 0 to 4000 MHz and a gain of 16 dB with a supply voltage of 28 V . This Gan Transistor can provide an output power of up to 45 W GaN has superior properties when compared to silicon or GaAs - It has a higher breakdown voltage, saturated electron drift velocity and thermal condicitivity. This transistor is available in the form of a bare die.

Product Specifications

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Product Details

  • Part Number
    CGH40045
  • Manufacturer
    Wolfspeed
  • Description
    45-W RF Power GaN HEMT

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Test & Measurement, Wireless Infrastructure
  • Application
    Cellular, WCDMA, EDGE, CDMA, Radio
  • CW/Pulse
    CW
  • Frequency
    DC to 4 GHz
  • Saturated Power
    46.5 to 47.4 dBm
  • Small Signal Gain
    12.5 to 14 dB
  • VSWR
    10.00:1
  • Class
    A, AB
  • Supply Voltage
    28 V
  • Threshold Voltage
    -3.8 to -2.3 V
  • Breakdown Voltage - Drain-Source
    120 V
  • Drain Current
    400 mA
  • Package Type
    Flange
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

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