CGH40120P

RF Transistor by Wolfspeed, A Cree Company | Visit website (67 more products)

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The CGH40120P is a gallium nitride (GaN) high electron mobility RF Transistor (HEMT). It operates at a frequency between 0 to 2500 MHz and a gain of 20 dB with a supply voltage of 28 V . This Gan Transistor can provide an output power of up to 120 W GaN has superior properties when compared to silicon or GaAs - It has a higher breakdown voltage, saturated electron drift velocity and thermal condicitivity. This transistor is available in the form of a bare die.

Product Specifications

  • Part Number
    CGH40120P
  • Manufacturer
    Wolfspeed, A Cree Company
  • Description
    120 W, RF Power GaN HEMT
  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Test & Measurement, Wireless Infrastructure
  • Application
    Cellular, WCDMA, EDGE, CDMA, Radio
  • CW/Pulse
    CW
  • Frequency
    DC to 2.5 GHz
  • Power
    50 dBm
  • Power(W)
    100 W
  • Small Signal Gain
    15.5 dB
  • VSWR
    10.00:1
  • Class
    A, AB
  • Supply Voltage
    28 V
  • Threshold Voltage
    -3.8 to -2.3 V
  • Breakdown Voltage - Drain-Source
    120 V
  • Drain Efficiency
    0.6
  • Drain Current
    1 A
  • Package Type
    Flange
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C
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