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The CGH40180PP is a gallium nitride (GaN) high electron mobility RF Transistor (HEMT). It operates at a frequency between 0 to 2500 MHz and a gain of 20 dB with a supply voltage of 28 V . This Gan Transistor can provide an output power of up to 180 W GaN has superior properties when compared to silicon or GaAs - It has a higher breakdown voltage, saturated electron drift velocity and thermal condicitivity. This transistor is available in the form of a bare die.
2.7 to 3.1 GHz S Band GaN on SiC HEMT Transistor for Avionics
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