Note : Your request will be directed to Wolfspeed, A Cree Company.
The CGH40180PP is a gallium nitride (GaN) high electron mobility RF Transistor (HEMT). It operates at a frequency between 0 to 2500 MHz and a gain of 20 dB with a supply voltage of 28 V . This Gan Transistor can provide an output power of up to 180 W GaN has superior properties when compared to silicon or GaAs - It has a higher breakdown voltage, saturated electron drift velocity and thermal condicitivity. This transistor is available in the form of a bare die.
30 W GaN HEMT from 13.75 to 14.5 GHz for SATCOM Applications
SiGe:C NPN Heterojunction Bipolar Transistor
1250 W GaN Power Transistor from 430 to 450 MHz
8 W GaN Power HEMT Die from DC to 26 GHz
You can now find similar products from multiple companies on everything RF.
Let us know what you need, we can help find products that meet your requirement.
Stay updated with the RF & Microwave Industry.
By signing up for our newsletter you agree to our Terms of Service and acknowledge receipt of our Privacy Policy.
By creating an account with us you agree to our Terms of Service and acknowledge receipt of our Privacy Policy.
Content submitted here will be sent to our editorial team who will review and consider it for publication on the website. you will be emailed if this content is published on everything RF.
Please click on the button in the email to get access to this section.
Processing...Please wait.
