CGH40180PP

RF Transistor by Wolfspeed, A Cree Company (68 more products)

Note : Your Quotation Request will be directed to Wolfspeed, A Cree Company.

The CGH40180PP is a gallium nitride (GaN) high electron mobility RF Transistor (HEMT). It operates at a frequency between 0 to 2500 MHz and a gain of 20 dB with a supply voltage of 28 V . This Gan Transistor can provide an output power of up to 180 W GaN has superior properties when compared to silicon or GaAs - It has a higher breakdown voltage, saturated electron drift velocity and thermal condicitivity. This transistor is available in the form of a bare die.

Product Specifications

    Product Details

    • Part Number :
      CGH40180PP
    • Manufacturer :
      Wolfspeed, A Cree Company
    • Description :
      180-W RF Power GaN HEMT

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Test & Measurement, Wireless Infrastructure
    • Application :
      Cellular, WCDMA, EDGE, CDMA, Radio
    • CW/Pulse :
      CW
    • Frequency :
      DC to 2.5 GHz
    • Saturated Power :
      52.55 to 53.4 dBm
    • Small Signal Gain :
      13 to 19 dB
    • VSWR :
      10.00:1
    • Class :
      A, AB
    • Supply Voltage :
      28 V
    • Threshold Voltage :
      -3.8 to -2.3 V
    • Breakdown Voltage - Drain-Source :
      120 V
    • Drain Current :
      2 A
    • Package Type :
      Flange
    • RoHS :
      Yes
    • Storage Temperature :
      -65 to 150 Degree C

    Technical Documents

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