CGH55015F2/P2

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CGH55015F2/P2 Image

TheCGH55015F2/P2 is a gallium nitride (GaN) high electron mobility RF Transistor (HEMT). It operates at a frequency between 4500 to 6000 MHz and a gain of 12 dB. This Gan Transistor can provide an output power of up to 10 W GaN has superior properties when compared to silicon or GaAs - It has a higher breakdown voltage, saturated electron drift velocity and thermal condicitivity. This transistor is available in the form of a bare die.

Product Specifications

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Product Details

  • Part Number
    CGH55015F2/P2
  • Manufacturer
    Wolfspeed
  • Description
    10 W, C-band, Unmatched, GaN HEMT

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Aerospace & Defence, Wireless Infrastructure
  • Application
    C Band
  • CW/Pulse
    Pulse
  • Frequency
    4.5 to 6 GHz
  • Power
    40 to 40.97 dBm
  • Power(W)
    12.5 W
  • Small Signal Gain
    10 to 12 dB
  • VSWR
    10.00:1
  • Class
    A, AB
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    120 V
  • Drain Current
    200 mA
  • Package Type
    Flange
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

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