RF Transistor by Wolfspeed (65 more products)

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TheCGH55030F1/P1 is a gallium nitride (GaN) high electron mobility RF Transistor (HEMT). It operates at a frequency between 0 to 300 MHz and a gain of 10 dB. This Gan Transistor can provide an output power of up to 30 W GaN has superior properties when compared to silicon or GaAs - It has a higher breakdown voltage, saturated electron drift velocity and thermal condicitivity. This transistor is available in the form of a bare die.

Product Specifications

  • Part Number
  • Manufacturer
  • Description
    30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX
  • Transistor Type
  • Application Industry
    Radar, SATCOM, Telecom, Military
  • Application Type
    Point to Point, Data Link, Radar, UAV
  • Grade
    Military, Aerospace, Commercial
  • Frequency
    0 to 300 MHz
  • Gain
    10 dB
  • Power
    30 W
  • Power Added Effeciency
  • Technology
  • Package
    Ceramic, Flanged
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