CGH55030F1/P1 Image

CGH55030F1/P1

RF Transistor by Wolfspeed, A Cree Company | Visit website (67 more products)

Note : Your Quotation Request will be directed to Wolfspeed, A Cree Company.

TheCGH55030F1/P1 is a gallium nitride (GaN) high electron mobility RF Transistor (HEMT). It operates at a frequency between 0 to 300 MHz and a gain of 10 dB. This Gan Transistor can provide an output power of up to 30 W GaN has superior properties when compared to silicon or GaAs - It has a higher breakdown voltage, saturated electron drift velocity and thermal condicitivity. This transistor is available in the form of a bare die.

Product Specifications

  • Part Number
    CGH55030F1/P1
  • Manufacturer
    Wolfspeed, A Cree Company
  • Description
    30-W, 5500 to 5800-MHz, 28-V, GaN HEMT for WiMAX
  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Wireless Infrastructure
  • Application
    wiMax
  • CW/Pulse
    CW
  • Frequency
    DC to 6 GHz
  • Power
    36.02 dBm
  • Power(W)
    4 W
  • Peak Output Power
    30 W
  • Small Signal Gain
    8.5 to 10 dB
  • VSWR
    10.00:1
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    120 V
  • Drain Current
    250 mA
  • Package Type
    Flange
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C
Click to view more product details on manufacturer's website  »
Need Help?

Need Help?

x
Let us know what you need, we can help find products that meet your requirement.