CGH60008D

RF Transistor by Wolfspeed, A Cree Company (68 more products)

Note : Your Quotation Request will be directed to Wolfspeed, A Cree Company.

The CGH60008D is a gallium nitride (GaN) high electron mobility RF Transistor (HEMT). It operates at a frequency between 0 to 6000 MHz and a gain of 15 dB with a supply voltage of 28 V . This Gan Transistor can provide an output power of up to 8 W GaN has superior properties when compared to silicon or GaAs - It has a higher breakdown voltage, saturated electron drift velocity and thermal condicitivity. This transistor is available in the form of a bare die.

Product Specifications

    Product Details

    • Part Number :
      CGH60008D
    • Manufacturer :
      Wolfspeed, A Cree Company
    • Description :
      8 W, 6.0 GHz, GaN HEMT Die

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Test & Measurement, Wireless Infrastructure
    • Application :
      Cellular, WCDMA, EDGE, CDMA, Radio
    • CW/Pulse :
      Pulse, CW
    • Frequency :
      DC to 6 GHz
    • Saturated Power :
      39.3 dBm
    • Small Signal Gain :
      15 dB
    • VSWR :
      10.00:1
    • Class :
      A, AB
    • Supply Voltage :
      28 V
    • Threshold Voltage :
      -3.8 to -2.3 V
    • Breakdown Voltage - Drain-Source :
      120 V
    • Drain Efficiency :
      0.65
    • Drain Current :
      60 mA
    • Drain Bias Current :
      1.75 to 2.1 A
    • IMD :
      -30 dBc
    • Package Type :
      Die
    • RoHS :
      Yes
    • Storage Temperature :
      -65 to 150 Degree C

    Technical Documents

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