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The CGH60030D is a gallium nitride (GaN) high electron mobility RF Transistor (HEMT). It operates at a frequency between 0 to 6000 MHz and a gain of 15 dB with a supply voltage of 28 V . This Gan Transistor can provide an output power of up to 30 W GaN has superior properties when compared to silicon or GaAs - It has a higher breakdown voltage, saturated electron drift velocity and thermal condicitivity. This transistor is available in the form of a bare die.
DC to 4 GHz, RF Power GaN HEMT
400 MHz to 2.7 GHz, LDMOS Power Transistor
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