Note : Your request will be directed to Wolfspeed, A Cree Company.
The CGH60030D is a gallium nitride (GaN) high electron mobility RF Transistor (HEMT). It operates at a frequency between 0 to 6000 MHz and a gain of 15 dB with a supply voltage of 28 V . This Gan Transistor can provide an output power of up to 30 W GaN has superior properties when compared to silicon or GaAs - It has a higher breakdown voltage, saturated electron drift velocity and thermal condicitivity. This transistor is available in the form of a bare die.
300 W RF Power GaN Transistor for Cooking Applications
5 W LDMOS Integrated Doherty MMIC from 859 to 960 MHz
130 W GaN HEMT from DC to 3 GHz
20 W GaN on SiC HEMT from DC to 5 GHz
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