Note : Your request will be directed to Wolfspeed, A Cree Company.

The CGH60120D is a gallium nitride (GaN) high electron mobility RF Transistor (HEMT). It operates at a frequency between 0 to 6000 MHz and a gain of 13 dB with a supply voltage of 28 V . This Gan Transistor can provide an output power of up to 120 W GaN has superior properties when compared to silicon or GaAs - It has a higher breakdown voltage, saturated electron drift velocity and thermal condicitivity. This transistor is available in the form of a bare die.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    Wolfspeed, A Cree Company
  • Description
    120 W, 6.0 GHz, GaN HEMT Die

General Parameters

  • Transistor Type
  • Technology
    GaN on SiC
  • Application Industry
    Test & Measurement, Wireless Infrastructure
  • Application
    Cellular, WCDMA, EDGE, CDMA, Radio
  • CW/Pulse
  • Frequency
    DC to 6 GHz
  • Saturated Power
    50.79 dBm
  • Small Signal Gain
    13 dB
  • VSWR
  • Class
    A, AB
  • Supply Voltage
    10 V
  • Threshold Voltage
    -3.8 to -2.3 V
  • Breakdown Voltage - Drain-Source
    120 V
  • Drain Efficiency
  • Drain Current
    800 mA
  • Drain Bias Current
    23.2 to 28 A
  • IMD
    -30 dBc
  • Package Type
  • RoHS
  • Storage Temperature
    -65 to 150 Degree C

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