CGHV14250 Image

CGHV14250

RF Transistor by Wolfspeed, A Cree Company (67 more products)

Note : Your Quotation Request will be directed to Wolfspeed, A Cree Company.

<p>The CGHV14250 from Cree is a GaN high electron mobility transistor(HEMT) ideally used for L-band radar amplifier applications. It operates from 1.2 to 1.4 GHz, can provide output power of 330 W, has a gain of 18 dB and a drain efficiency of 77%. The package options are ceramic/metal flange and pill package.</p>

Product Specifications

  • Part Number
    CGHV14250
  • Manufacturer
    Wolfspeed, A Cree Company
  • Description
    250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems
  • Transistor Type
  • Application
    L Band
  • Application Type
    Radar
  • Frequency
    1200 to 1400 MHz
  • Gain
    18.2 to 18.6 dB
  • Power
    330 to 365 W
  • Supply Voltage
    125 V
  • Breakdown Voltage - Drain-Source
    125 V
  • Drain Efficiency
    76 to 80%
  • Drain Current
    31400 to 37600 mA
  • VSWR
    5:1
  • Junction Temperature (Tj)
    225°C
  • Voltage - Drain-Source (Vdss)
    125 V
  • Voltage - Gate-Source (Vgs)
    -10 to 2 V
  • Thermal Resistance
    0.57 to 0.63°C/W
  • Package
    Ceramic
  • Storage Temperature
    -65 to 150°C
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