CGHV14250

RF Transistor by Wolfspeed, A Cree Company (68 more products)

Note : Your Quotation Request will be directed to Wolfspeed, A Cree Company.

The CGHV14250 from Cree is a GaN high electron mobility transistor(HEMT) ideally used for L-band radar amplifier applications. It operates from 1.2 to 1.4 GHz, can provide output power of 330 W, has a gain of 18 dB and a drain efficiency of 77%. The package options are ceramic/metal flange and pill package.

Product Specifications

    Product Details

    • Part Number :
      CGHV14250
    • Manufacturer :
      Wolfspeed, A Cree Company
    • Description :
      250-W, 1200 to 1400-MHz, GaN HEMT for L-Band Radar Systems

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Radar
    • Application :
      L Band, UHF
    • CW/Pulse :
      Pulse, CW
    • Frequency :
      500 MHz to 1.6 GHz
    • Power :
      54.39 to 55.19 dBm
    • Power(W) :
      330.37 W
    • Pulsed Width :
      500 us
    • Duty_Cycle :
      0.1
    • Small Signal Gain :
      18.2 dB
    • VSWR :
      10.00:1
    • Supply Voltage :
      50 V
    • Breakdown Voltage - Drain-Source :
      150 V
    • Drain Current :
      500 mA
    • Package Type :
      Flange
    • RoHS :
      Yes
    • Storage Temperature :
      -65 to 150 Degree C

    Technical Documents

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