CGHV1F006S Image

CGHV1F006S

RF Transistor by Wolfspeed, A Cree Company | Visit website (85 more products)

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The CGHV1F006S from Wolfspeed is an unmatched, GaN HEMT that operates from DC to 18 GHz. The device can be deployed for L, S, C, X and Ku-band amplifier applications. It provides a gain of 15 dB at 9 GHz and output power of 8 watts. The transistor operates on a 40-volt rail circuit and is available in a 3 x 4 mm, surface-mount, dual-flat-no-lead (DFN) package. Under reduced power conditions, the transistor can operate below 40 V to as low as 20-V VDD, maintaining high gain and efficiency.

Product Specifications

    Product Details

    • Part Number :
      CGHV1F006S
    • Manufacturer :
      Wolfspeed, A Cree Company
    • Description :
      8 W GaN HEMT from DC to 18 GHz

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Radar
    • CW/Pulse :
      CW, Pulse
    • Frequency :
      DC to 18 GHz
    • Power :
      39 dBm
    • Power(W) :
      8 W
    • Saturated Power :
      8 W
    • Gain :
      15 to 17 dB
    • Small Signal Gain :
      15.15 to 16.8 dB
    • VSWR :
      10.00:1
    • Class :
      AB
    • Supply Voltage :
      40 V
    • Threshold Voltage :
      -3.6 to -2.4 V
    • Breakdown Voltage - Drain-Source :
      100 V
    • Drain Current :
      60 mA
    • Package Type :
      Surface Mount
    • RoHS :
      Yes
    • Storage Temperature :
      -65 to 150 Degree C

    Technical Documents

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