CGHV1J006D

Note : Your request will be directed to Wolfspeed.

CGHV1J006D Image

The CGHV1J006D from Wolfspeed is a GaN High Electron Mobility Transistor that operates from 10 MHz to 18 GHz. It provides a saturated output power of 6 W with a small signal gain of 17 dB and a PAE of 60%. The transistor is manufactured using a 0.25 μm gate length fabrication process that offers an excellent high frequency, high efficiency features. It requires a supply voltage of 40 V and draws 1.2 mA of current. The transistor is available as a bare die that measures 800 x 84 microns and is suitable for satellite communications, PTP communications links, marine radars, pleasure craft radars, port vessel traffic services, broadband amplifiers, and high efficiency amplifier applications.

Product Specifications

View similar products

Product Details

  • Part Number
    CGHV1J006D
  • Manufacturer
    Wolfspeed
  • Description
    6 W GaN Transistor Die from 10 MHz to 18 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Radar, SATCOM, Broadcast
  • Application
    Satellite, Marine Radar, Broadband Amplifiers, Point to Point
  • CW/Pulse
    CW
  • Frequency
    10 MHz to 18 GHz
  • Power
    37.78 dBm (Psat)
  • Power(W)
    6 W (Psat)
  • Small Signal Gain
    17 dB
  • VSWR
    10:1
  • Supply Voltage
    40 V
  • Threshold Voltage
    -3.8 to -2.3 V
  • Breakdown Voltage - Drain-Source
    100 V
  • Drain Efficiency
    60 %
  • Drain Current
    70 mA
  • Junction Temperature (Tj)
    225 Degree C
  • Package Type
    Die
  • RoHS
    Yes
  • Grade
    Commercial, Military, Space
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents