RF Transistor by Wolfspeed, A Cree Company (67 more products)

Note : Your Quotation Request will be directed to Wolfspeed, A Cree Company.

The CGHV1J070D is a gallium nitride (GaN) high electron mobility RF Transistor (HEMT). It operates at a frequency between 0 to 18000 MHz and a gain of 17 dB with a supply voltage of 40 V . This Gan Transistor can provide an output power of up to 70 W GaN has superior properties when compared to silicon or GaAs - It has a higher breakdown voltage, saturated electron drift velocity and thermal condicitivity. This transistor is available in the form of a bare die.

Product Specifications

  • Part Number
  • Manufacturer
    Wolfspeed, A Cree Company
  • Description
    70-W, 18.0-GHz, GaN HEMT, 0.25 Micron Die
  • Transistor Type
  • Application Industry
    Radar, SATCOM, Telecom, Military
  • Application Type
    Radar, Point to Point, Data Link, UAV
  • Grade
    Military, Aerospace, Commercial
  • Frequency
    0 to 18000 MHz
  • Gain
    17 dB
  • Power
    70 W
  • Supply Voltage
    40 V
  • Power Added Effeciency
  • Technology
  • Package
Need Help?

Need Help?

Let us know what you need, we can help find products that meet your requirement.