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CGHV1J070D

RF Transistor by Wolfspeed, A Cree Company (68 more products)

Note : Your Quotation Request will be directed to Wolfspeed, A Cree Company.

The CGHV1J070D is a gallium nitride (GaN) high electron mobility RF Transistor (HEMT). It operates at a frequency between 0 to 18000 MHz and a gain of 17 dB with a supply voltage of 40 V . This Gan Transistor can provide an output power of up to 70 W GaN has superior properties when compared to silicon or GaAs - It has a higher breakdown voltage, saturated electron drift velocity and thermal condicitivity. This transistor is available in the form of a bare die.

Product Specifications

    Product Details

    • Part Number :
      CGHV1J070D
    • Manufacturer :
      Wolfspeed, A Cree Company
    • Description :
      70-W, 18.0-GHz, GaN HEMT Die

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Radar
    • Application :
      Satellite
    • CW/Pulse :
      CW
    • Frequency :
      10 MHz to 18 GHz
    • Saturated Power :
      48.4 dBm
    • Small Signal Gain :
      17 dB
    • VSWR :
      10.00:1
    • Class :
      A, AB
    • Supply Voltage :
      40 V
    • Threshold Voltage :
      -3.8 to -2.3 V
    • Breakdown Voltage - Drain-Source :
      100 V
    • Drain Efficiency :
      0.6
    • Drain Current :
      720 mA
    • Package Type :
      Die
    • RoHS :
      Yes
    • Storage Temperature :
      -65 to 150 Degree C

    Technical Documents

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