CGHV22100

RF Transistor by Wolfspeed, A Cree Company | Visit website (67 more products)

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The CGHV22100 is a 100 W, Gallium Nitride (GaN) high electron mobility transistor (HEMT) that operates from 1800 MHz to 2200 MHz. The transistor has a gain of 20 dB and an efficiency of 31-35

Product Specifications

  • Part Number
    CGHV22100
  • Manufacturer
    Wolfspeed, A Cree Company
  • Description
    100-W, 1800 to 2200-MHz, GaN HEMT for LTE
  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Wireless Infrastructure
  • Application
    4G, LTE
  • CW/Pulse
    Pulse
  • Frequency
    1.8 to 2.2 GHz
  • Power
    50 dBm
  • Power(W)
    100 W
  • Small Signal Gain
    19.75 to 22 dB
  • VSWR
    10.00:1
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Drain Current
    0.5 A
  • Package Type
    Surface Mount
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C
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