CGHV27030S

RF Transistor by Wolfspeed, A Cree Company | Visit website (67 more products)

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The CGHV27030S from Cree is an unmatched, GaN high electron mobility transistor (HEMT) which operates from 2.5 GHz to 2.7 GHz. It provides up to 30 W of power and requires a 50 V supply for operation. The transistor is available in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package.

Product Specifications

  • Part Number
    CGHV27030S
  • Manufacturer
    Wolfspeed, A Cree Company
  • Description
    30 W, DC - 6.0 GHz, GaN HEMT
  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Aerospace & Defence, Wireless Infrastructure
  • Application
    Tactical communications, LTE
  • CW/Pulse
    Pulse
  • Frequency
    DC to 6 GHz
  • Power
    43 to 44 dBm
  • Power(W)
    25.12 W
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.1
  • Small Signal Gain
    19 to 21.3 dB
  • VSWR
    10.00:1
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Drain Current
    0.13 A
  • Package Type
    Surface Mount
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C
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