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CGHV27060MP

RF Transistor by Wolfspeed, A Cree Company | Visit website (63 more products)

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The CGHV27060MP is a 50V/60W broadband GaN HEMT which is optimized for both linear and pulsed applications from DC to 2700 MHz. The transistor is available in a small plastic SMT package that measures 4.4mm x 6.5mm. This GaN HEMT is well suited for LTE micro base station amplifiers with 10 - 15W average power and high efficiency topologies, such as Doherty or Class A, B, and F amplifiers. It provides 80 Watts of pulsed power with 16.5 dB of gain and 70% efficiency. When used for WCDMA applications it provides 41.5 dBm of power with 180.25 dB gain and 33% efficiency.

Product Specifications

  • Part Number
    CGHV27060MP
  • Manufacturer
    Wolfspeed, A Cree Company
  • Description
    60-W, DC to 2700-MHz, 50-V, GaN HEMT for LTE and Pulse-Radar Applications
  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Radar
  • Application
    LTE, UHF
  • CW/Pulse
    Pulse
  • Frequency
    DC to 2.7 GHz
  • Power(W)
    79.98 W
  • Saturated Power
    49.03 dBm
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.1
  • Small Signal Gain
    16.5 to 18.5 dB
  • Class
    AB, F
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Drain Efficiency
    0.34
  • Drain Current
    125 mA
  • Package Type
    Surface Mount
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C
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