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CGHV27150MP

RF Transistor by Wolfspeed (65 more products)

Note : Your Quotation Request will be directed to Wolfspeed.

The CGHV27150MP is a gallium nitride (GaN) HEMT designed specifically for high efficiency, high gain applications from 2.3 to 2.7 GHz. It provides an output power of 150 Watts, gain of 16 dB, and has an efficiency of 34%. This GaN HEMT device is ideal for LTE, 4G Telecom and BWA amplifier applications. It is available in an overmold flange package which is matched at the input to 50 ohms.

Product Specifications

  • Part Number
    CGHV27150MP
  • Manufacturer
    Wolfspeed
  • Description
    150 W, 2.3 to 2.7 GHz, 50 V, GaN HEMT for LTE
  • Transistor Type
  • Application
    LTE
  • Application Type
    Cellular, Communication
  • Grade
    Commercial
  • Frequency
    2.3 to 2.7 GHz
  • Gain
    16 dB
  • Power
    51.76 dBm
  • Drain Efficiency
    34%
  • Saturated Power
    170 W
  • Package
    Surface Mount
  • Tags
    Plastic GaN Transistor
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