CGHV35400F1

Note : Your request will be directed to Wolfspeed.

CGHV35400F1 Image

The CGHV35400F1 from Wolfspeed is a GaN HEMT that operates from 2.9 to 3.5 GHz for S-band radar systems. It provides up to 500 W (57.1 dBm) of pulsed output power with a power gain of 11.1 dB and drain efficiency of up to 69%. The GaN HEMT has a duty cycle of 20% with 2 ms pulse lengths. It is based on Wolfspeed’s high-power density 50 V, 0.4 μm GaN on silicon carbide (SiC) manufacturing process and has long pulse capability to meet the developing trends in radar architectures. The HEMT is available in a fully matched IMFET housed in a thermally enhanced ceramic/metal air cavity flange package. It is matched to 50 ohms and is ideal for civil and military pulsed radar amplifiers.

Product Specifications

View similar products

Product Details

  • Part Number
    CGHV35400F1
  • Manufacturer
    Wolfspeed
  • Description
    500 W GaN HEMT from 2.9 to 3.5 GHz for S-Band Radar Systems

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar
  • CW/Pulse
    Pulse
  • Frequency
    2.9 to 3.5 GHz
  • Power
    57.1 dBm
  • Power(W)
    512.86 W
  • Duty_Cycle
    20 %
  • Small Signal Gain
    12.5 to 15 dB
  • Power Gain (Gp)
    10.4 to 11.1 dB
  • Input Return Loss
    -7.1 dB
  • VSWR
    3:1
  • Supply Voltage
    50 V
  • Voltage - Drain-Source (Vdss)
    150 V
  • Voltage - Gate-Source (Vgs)
    -10 to 2 V
  • Current
    500 mA
  • Drain Efficiency
    60 to 69 %
  • Drain Current
    24 A
  • Junction Temperature (Tj)
    225 Degree C
  • Package Type
    Flange
  • Grade
    Commercial, Military
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents