CGHV38375F

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CGHV38375F Image

The CGHV38375F from Wolfspeed is a GaN on SiC Amplifier (IM-FET) that operates from 2.75 to 3.75 GHz. It delivers a saturated output power of 400 W with a small signal gain of more than 10 dB and has an efficiency of 55%. This amplifier is based on GaN on SiC FET technology and is suitable as a high-power building block supporting both pulsed and CW radar applications. It requires a supply voltage of 50 V and draws 500 mA of current. The amplifier is matched to 50 ohms at both input and output ports and provides coverage over the entire S-Band radar band. It is available in a flanged package.

Product Specifications

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Product Details

  • Part Number
    CGHV38375F
  • Manufacturer
    Wolfspeed
  • Description
    400 W CW/Pulsed GaN Amplifier from 2.75 to 3.75 GHz

General Parameters

  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar
  • Application Type
    Pulsed and CW S-Band Radar
  • CW/Pulse
    CW, Pulse
  • Frequency
    2.75 to 3.75 GHz
  • Power
    57.7 dBm
  • Power(W)
    588.84 W
  • Small Signal Gain
    10 to 13.5 dB
  • Power Gain (Gp)
    9.9 to 11.7 dB
  • Input Return Loss
    -6 dB
  • VSWR
    5:1
  • Supply Voltage
    50 V
  • Threshold Voltage
    -3.8 to -2.3 V (Gate)
  • Breakdown Voltage - Drain-Source
    125 V
  • Current
    500 mA
  • Drain Efficiency
    50 to 67 %
  • Drain Current
    24 A
  • Junction Temperature (Tj)
    225 Degree C
  • Grade
    Commercial, Military, Space Qualified
  • Storage Temperature
    -55 to 150 Degree C

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