RF Transistor by Wolfspeed, A Cree Company | Visit website (67 more products)

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The CGHV40030 from CREE is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT), that operates from DC to 6 GHz. It provides up to 30 W of output power with70% efficiency at Psat. The transistor operates on a 50-volt rail circuit and is housed in a 2-lead flange or pill package. The CGHV40030 is ideal for L, S and C Band applications.

Product Specifications

  • Part Number
  • Manufacturer
    Wolfspeed, A Cree Company
  • Description
    30-W, DC to 6-GHz, 50-V, GaN HEMT
  • Transistor Type
  • Technology
    GaN on SiC
  • Application Industry
    Aerospace & Defence, Wireless Infrastructure
  • Application
    L, S, C Band
  • CW/Pulse
  • Frequency
    DC to 6 GHz
  • Power
    44.77 to 45.44 dBm
  • Power(W)
    34.99 W
  • Small Signal Gain
    15 to 16 dB
  • VSWR
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Drain Current
    150 mA
  • Package Type
    Surface Mount
  • RoHS
  • Storage Temperature
    -65 to 150 Degree C
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