RF Transistor by Wolfspeed, A Cree Company | Visit website (67 more products)

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The CGHV40050 from Cree is a GaN HEMT that operates from DC to 4 GHz. It provides a saturated output power of up to 77 Watts, has a small signal gain of 17.5 dB and efficiency of up to 60%. The transistor requires a 50 V supply. The device can be used for a range of applications from narrow band UHF, L and S Band as well as multi-octave bandwidth amplifiers up to 4 GHz. The transistor is available in a 2-lead flange and pill package.

Product Specifications

  • Part Number
  • Manufacturer
    Wolfspeed, A Cree Company
  • Description
    50 W, DC - 4.0 GHz, 50 V, GaN HEMT
  • Transistor Type
  • Technology
    GaN on SiC
  • Application Industry
    Aerospace & Defence, Wireless Infrastructure
  • Application
    UHF, L Band, S Band
  • CW/Pulse
  • Frequency
    DC to 4 GHz
  • Power(W)
    72.44 W
  • Saturated Power
    48.4 to 48.6 dBm
  • Small Signal Gain
    15.5 dB
  • VSWR
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Drain Current
    0.3 A
  • Package Type
  • RoHS
  • Storage Temperature
    -65 to 150 Degree C
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