The CGHV40050 from Cree is a GaN HEMT that operates from DC to 4 GHz. It provides a saturated output power of up to 77 Watts, has a small signal gain of 17.5 dB and efficiency of up to 60%. The transistor requires a 50 V supply. The device can be used for a range of applications from narrow band UHF, L and S Band as well as multi-octave bandwidth amplifiers up to 4 GHz. The transistor is available in a 2-lead flange and pill package.