CGHV40200PP Image


Note : Your request will be directed to Wolfspeed, A Cree Company.

The CGHV40200PP from Wolfspeed is an unmatched, gallium-nitride (GaN) on Silicon Carbide (Sic) high-electron-mobility transistor (HEMT) that provides 250 watts of power from DC to 2 GHz. The transistor has 67 % Efficiency at PSAT and requires a 50-volt rail. It is available in a 4-lead flange package. This GaN on SiC HEMT ideal for general-purpose, broadband RF and microwave applications.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    Wolfspeed, A Cree Company
  • Description
    250 Watts GaN on SiC HEMT from DC to 2 GHz

General Parameters

  • Transistor Type
  • Technology
    GaN on SiC
  • Application Industry
    Radar, Test & Measurement, Wireless Infrastructure
  • CW/Pulse
  • Frequency
    DC to 2 GHz
  • Power
    53.38 to 54.31 dBm
  • Power(W)
    250 W
  • Saturated Power
    250 Watts (Typ)
  • Gain
    15.4 to 16.5 dB
  • Small Signal Gain
    20.1 to 21.7 dB
  • Power Gain (Gp)
    16.1 dB
  • Drain Efficiency
    64% to 67%

Technical Documents

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