RF Transistor by Wolfspeed, A Cree Company | Visit website (67 more products)

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The CGHV40320D is a gallium nitride (GaN) high electron mobility RF Transistor (HEMT). It operates from DC to 4 GHz, provides up to 320 W of saturated power, has a 65 % of PAE and a gain of 19 dB. The transistor requires a supply voltage of 50 V and is available in a form of bare die. It can be used for military, commercial, radar and general purpose applications.

Product Specifications

  • Part Number
  • Manufacturer
    Wolfspeed, A Cree Company
  • Description
    320 W, 4.0 GHz, GaN HEMT Die
  • Transistor Type
  • Technology
    GaN on SiC
  • Application Industry
    Test & Measurement, Wireless Infrastructure
  • Application
    Cellular, WCDMA, EDGE, CDMA, Radio
  • CW/Pulse
  • Frequency
    DC to 4 GHz
  • VSWR
  • Supply Voltage
    32 V
  • Threshold Voltage
    -3.8 to -2.3 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Package Type
    Surface Mount
  • RoHS
  • Storage Temperature
    -65 to 150 Degree C
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