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CGHV40320D

RF Transistor by Wolfspeed (65 more products)

Note : Your Quotation Request will be directed to Wolfspeed.

The CGHV40320D is a gallium nitride (GaN) high electron mobility RF Transistor (HEMT). It operates from DC to 4 GHz, provides up to 320 W of saturated power, has a 65 % of PAE and a gain of 19 dB. The transistor requires a supply voltage of 50 V and is available in a form of bare die. It can be used for military, commercial, radar and general purpose applications.

Product Specifications

  • Part Number
    CGHV40320D
  • Manufacturer
    Wolfspeed
  • Description
    DC to 4 GHz GaN Transistor for General Purpose Applications
  • Transistor Type
  • Application
    W-CDMA, LTE, EDGE, CDMA
  • Application Type
    Communication
  • Grade
    SATCOM, Military, Space, Commercial
  • Frequency
    DC to 4 GHz
  • Gain
    19 dB
  • Power
    55.05 dBm (Psat)
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Drain Efficiency
    65%
  • Drain Current
    33 to 41.8 A
  • Voltage - Gate-Source (Vgs)
    -10, 2 V
  • Package
    Die
  • Storage Temperature
    -65 to 150 Degrees C
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