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CGHV60170D

RF Transistor by Wolfspeed (65 more products)

Note : Your Quotation Request will be directed to Wolfspeed.

The CGHV60170D from Cree is a GaN high electron mobility transistor (HEMT) that operates up to 6 GHz. It provides a gain of 18 dB, power of 170 Watts with a PAE of 65%. The transistor requires a 50 V supply for operation. It is available as a bare die in gel-pak container packages and can be used in broadband amplifiers, tactical and satellite communications applications.

Product Specifications

  • Part Number
    CGHV60170D
  • Manufacturer
    Wolfspeed
  • Description
    6 GHz GaN Transistor Provides 170 Watts with 65% PAE
  • Transistor Type
  • Application
    W-CDMA, LTE, EDGE
  • Application Type
    Communication, Avionics, Radar
  • Grade
    SATCOM, Military, Space, Commercial
  • Frequency
    6 GHz
  • Small Signal Gain
    17 dB
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Drain Efficiency
    65%
  • Drain Current
    16.88 to 20.8 Amp
  • Feedback Capacitance
    0.6 pF
  • Input Capacitance
    28.3 pF
  • VSWR
    10:1
  • On Resistance
    0.14 Ohms
  • Output Capacitance
    6.35 pF
  • Saturated Power
    170 W
  • Voltage - Gate-Source (Vgs)
    1.9 V
  • Package
    Die
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