Note : Your request will be directed to Wolfspeed, A Cree Company.

The CGHV60170D from Cree is a GaN high electron mobility transistor (HEMT) that operates up to 6 GHz. It provides a gain of 18 dB, power of 170 Watts with a PAE of 65%. The transistor requires a 50 V supply for operation. It is available as a bare die in gel-pak container packages and can be used in broadband amplifiers, tactical and satellite communications applications.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    Wolfspeed, A Cree Company
  • Description
    170-W, 6.0-GHz, 50-V GaN HEMT Die

General Parameters

  • Transistor Type
  • Technology
    GaN on SiC
  • Application Industry
    Test & Measurement, Wireless Infrastructure
  • Application
    Cellular, WCDMA, EDGE, CDMA, Radio, LTE
  • CW/Pulse
  • Frequency
    DC to 6 GHz
  • Power(W)
    169.82 W
  • Saturated Power
    52.3 dBm
  • Pulsed Width
    100 us
  • Duty_Cycle
  • Small Signal Gain
    17 dB
  • VSWR
  • Class
    A, AB
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Drain Efficiency
  • Drain Current
    260 mA
  • IMD
    -30 dBc
  • Package Type
  • RoHS
  • Storage Temperature
    -65 to 150 Degree C

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