Note : Your request will be directed to Wolfspeed, A Cree Company.

The CGHV96050F2 is a gallium nitride (GaN) high electron mobility RF Transistor (HEMT). It operates at a frequency between 8400 to 9600 MHz and can provide an output power of up to 50 W. GaN has superior properties when compared to silicon or GaAs - It has a higher breakdown voltage, saturated electron drift velocity and thermal condicitivity. This transistor is available in the form of a bare die.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    Wolfspeed, A Cree Company
  • Description
    50-W, 7.9 to 9.6-GHz, 50-ohm, Input/Output-Matched GaN HEMT

General Parameters

  • Transistor Type
  • Technology
    GaN on SiC
  • Application Industry
  • Application
    L Band
  • CW/Pulse
  • Frequency
    7.9 to 9.6 GHz
  • Power
    46.72 to 48.4 dBm
  • Power(W)
    69.18 W
  • Pulsed Width
    100 us
  • Duty_Cycle
  • Small Signal Gain
    10.5 to 11.8 dB
  • VSWR
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    100 V
  • Drain Current
    500 mA
  • Package Type
  • RoHS
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents

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