CGHV96100F2

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CGHV96100F2 Image

The CGHV96100F2 from Wolfspeed is a High-Electron-Mobility Transistor (HEMT) that operates from 8.4 to 9.6 GHz. It delivers an output power of more than 145 W with a power gain of 10.2 dB and has an efficiency of 45%. This transistor is manufactured on a gallium-nitride (GaN)-on-silicon carbide (SiC) process and exhibits superior electrical characteristics compared to silicon or gallium arsenide such as higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. It requires a DC supply of 40 V and consumes 1000 mA of current. The transistor is available in a ceramic/metal flanged surface-mount package that measures 0.95 x 0.906 x 0.198 inches and is ideal for marine radar, weather monitoring, air traffic control, maritime vessel traffic control, and port security applications.

Product Specifications

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Product Details

  • Part Number
    CGHV96100F2
  • Manufacturer
    Wolfspeed
  • Description
    145 W GaN-on SiC-HEMT from 8.4 to 9.6 GHz

General Parameters

  • Transistor Type
    FET, HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Radar
  • Application
    Air Traffic Control, Marine Radar, Weather Monitoring
  • CW/Pulse
    Pulse
  • Frequency
    7.9 to 9.6 GHz
  • Power
    50 to 51.61 dBm
  • Power(W)
    100 to 145 W
  • Small Signal Gain
    10.5 to 12.4 dB
  • Power Added Effeciency
    35.4 to 45.5 %
  • Input Return Loss
    2.8 to 5.2 dB
  • Supply Voltage
    48 V
  • Threshold Voltage
    -3.8 to -2.3 dB
  • Breakdown Voltage - Drain-Source
    100 V
  • Junction Temperature (Tj)
    225 Degree C
  • Package Type
    4-Hole Flanged
  • RoHS
    Yes
  • Grade
    Commercial
  • Operating Temperature
    -40 to 125 Degree C
  • Storage Temperature
    -65 to 150 Degree C

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