GTRA260502M-V1

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GTRA260502M-V1 Image

The GTRA260502M from Wolfspeed is a High-Electron-Mobility Transistor (HEMT) that operates from 2515 to 2675 MHz. It delivers an output power of 50 W (P3dB) with a gain of 16 dB and has an efficiency of 57%. This transistor is manufactured using a gallium-nitride (GaN) on silicon carbide (SiC) process and requires a DC supply of 48 V. The transistor is available in a surface-mount thermally-enhanced DFN package that measures 6.50 x 7.00 x 0.90 mm and can be used in multi-standard cellular power amplifier applications.

Product Specifications

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Product Details

  • Part Number
    GTRA260502M-V1
  • Manufacturer
    Wolfspeed
  • Description
    50 W GaN-on-SiC HEMT from 2515 to 2675 MHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Cellular
  • Application
    Multi-standard cellular power amplifier applications
  • CW/Pulse
    CW, Pulse
  • Frequency
    2.515 to 2.675 GHz
  • Power
    39 dBm
  • Power(W)
    7.94 W
  • OIP3
    45 W
  • Pulsed Width
    10 us
  • Duty_Cycle
    10 %
  • Gain
    16 dB
  • Efficiency
    53 to 64 %
  • Class
    AB
  • Supply Voltage
    48 V
  • Drain Gate Voltage
    125 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Voltage - Drain-Source (Vdss)
    125 V
  • Voltage - Gate-Source (Vgs)
    -10 to 2 V
  • Drain Efficiency
    40 to 47.5 %
  • Drain Current
    1 to 1.6 A
  • Drain Leakage Current (Id)
    5 mA
  • Junction Temperature (Tj)
    225 Degree C
  • Thermal Resistance
    6.5 to 7.3 °C/W
  • Package Type
    Chip
  • Package
    DFN 6 Lead
  • Dimension
    6.5 x 7 x 0.9 mm
  • RoHS
    Yes
  • Grade
    Commercial
  • Storage Temperature
    -65 to 150 Degree C

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