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The GTRA260502M from Wolfspeed is a High-Electron-Mobility Transistor (HEMT) that operates from 2515 to 2675 MHz. It delivers an output power of 50 W (P3dB) with a gain of 16 dB and has an efficiency of 57%. This transistor is manufactured using a gallium-nitride (GaN) on silicon carbide (SiC) process and requires a DC supply of 48 V. The transistor is available in a surface-mount thermally-enhanced DFN package that measures 6.50 x 7.00 x 0.90 mm and can be used in multi-standard cellular power amplifier applications.
GaN on SiC HEMT Doherty Transistor from 3.4 to 3.6 GHz
13.5 W GaN-on-SiC HEMT from 2.5 to 5 GHz
56 W GaN-on-SiC HEMT from 3700 to 3980 MHz
400 W Thermally-Enhanced LDMOS Transistor from 859 to 960 MHz
6 W GaN Transistor Die from 10 MHz to 18 GHz
25 W LDMOS FET from 500 to 1400 MHz
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