Fill one form and get quotes for cable assemblies from multiple manufacturers
Note : Your request will be directed to Wolfspeed.
The GTRA260502M from Wolfspeed is a High-Electron-Mobility Transistor (HEMT) that operates from 2515 to 2675 MHz. It delivers an output power of 50 W (P3dB) with a gain of 16 dB and has an efficiency of 57%. This transistor is manufactured using a gallium-nitride (GaN) on silicon carbide (SiC) process and requires a DC supply of 48 V. The transistor is available in a surface-mount thermally-enhanced DFN package that measures 6.50 x 7.00 x 0.90 mm and can be used in multi-standard cellular power amplifier applications.
GaN on SiC HEMT Doherty Transistor from 3.4 to 3.6 GHz
13.5 W GaN-on-SiC HEMT from 2.5 to 5 GHz
56 W GaN-on-SiC HEMT from 3700 to 3980 MHz
400 W Thermally-Enhanced LDMOS Transistor from 859 to 960 MHz
6 W GaN Transistor Die from 10 MHz to 18 GHz
25 W LDMOS FET from 500 to 1400 MHz
You can now find similar products from multiple companies on everything RF.
Create an account on everything RF to get a range of benefits.
By creating an account with us you agree to our Terms of Service and acknowledge receipt of our Privacy Policy.
Login to everything RF to download datasheets, white papers and more content.
Fill the form to Download the Media Kit
Content submitted here will be sent to our editorial team who will review and consider it for publication on the website. you will be emailed if this content is published on everything RF.
Please click on the button in the email to get access to this section.