GTRA364002FC-V1 Image

GTRA364002FC-V1

Note : Your request will be directed to Wolfspeed, A Cree Company.

The GTRA364002FC-V1 from Wolfspeed is a GaN on SiC High Electron Mobility Transistor that operates from 3.4 to 3.6 GHz. It provides an output power of 400 W and a gain of 13 dB while operating from 48 V supply. This Pulsed CW device is available in a thermally-enhanced surface mount package with earless flange and is ideal for use in multi-standard cellular power amplifier applications.

Product Specifications

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Product Details

  • Part Number
    GTRA364002FC-V1
  • Manufacturer
    Wolfspeed, A Cree Company
  • Description
    400 W GaN on SiC HEMT from 3.4 to 3.6 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Wireless Infrastructure
  • Application
    WCDMA, 5G
  • CW/Pulse
    CW
  • Frequency
    3400 to 3600 MHz
  • Power
    56.02 dBm
  • Power(W)
    400 W
  • Saturated Power
    400 W
  • Gain
    13 dB
  • Supply Voltage
    48 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Drain Efficiency
    43 %
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degrees C

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