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GTRA384802FC

RF Transistor by Wolfspeed, A Cree Company | Visit website (103 more products)

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The GTRA384802FC from Wolfspeed is a high power GaN on SiC HEMT transistor that operates from 3600 to 3800 MHz. It provides an output power up to 400 W with gain of 13.7 dB and efficiency of 62%. The transistor requires a 48 V power supply and is available in a thermally enhanced package with earless flange. It is ideal for multi-standard cellular power amplifier applications.

Product Specifications

    Product Details

    • Part Number :
      GTRA384802FC
    • Manufacturer :
      Wolfspeed, A Cree Company
    • Description :
      400 W, 3600 to 3800 MHz GaN MMIC HEMT for Cellular Power Amplifier Applications

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Cellular
    • Application Type :
      WCDMA
    • CW/Pulse :
      CW, Pulse
    • Frequency :
      3.6 to 3.8 GHz
    • Power :
      56.02 dBm
    • Power(W) :
      400 W
    • Power Gain (Gp) :
      13.7 dB
    • Supply Voltage :
      48 V
    • Threshold Voltage :
      -3 V
    • Drain Gate Voltage :
      -3
    • Breakdown Voltage - Drain-Source :
      150 V
    • Voltage - Drain-Source (Vdss) :
      125 V
    • Voltage - Gate-Source (Vgs) :
      -10 to 2 V
    • Drain Efficiency :
      44%
    • Drain Current :
      9.5 to 13.5 A
    • Drain Bias Current :
      -3
    • Drain Leakage Current (Id) :
      5 mA
    • Junction Temperature (Tj) :
      225 Degree C
    • Package Type :
      Flange
    • RoHS :
      Yes
    • Storage Temperature :
      -65 to 150 Degree C

    Technical Documents

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