GTRA412852FC Image


Note : Your request will be directed to Wolfspeed, A Cree Company.

The GTRA412852FC-V1 from Wolfspeed is a GaN-on-SiC High Electron Mobility Transistor (HEMT) that operates from 3.4 to 4.1 GHz. It delivers an output power of 235 watts (P3dB) with a gain of 11.5 dB and an efficiency of 45%. This pulsed device requires a supply voltage of 48 V and has a pulse width of 10 µs. It RoHS-complaint, and Pb-free. The transistor is available in a thermally enhanced package with an earless flange and is ideal for use in multi-standard cellular power amplifiers.

Product Specifications

View similar products

Product Details

  • Part Number
  • Manufacturer
    Wolfspeed, A Cree Company
  • Description
    GaN-on-SiC HEMT from 3.4 to 4.1 GHz

General Parameters

  • Transistor Type
  • Technology
    GaN on SiC
  • Application Industry
  • CW/Pulse
    Pulse, CW
  • Frequency
    3.4 to 4.1 GHz
  • Power
    53.71 dBm
  • Power(W)
    235 W (P3dB)
  • Pulsed Width
    10 µs
  • Gain
    10 to 11.5 dB
  • Efficiency
    45 Percent
  • VSWR
  • Supply Voltage
    48 V
  • Lead Free
  • RoHS
Need Help Finding a Product?

Need Help?

Let us know what you need, we can help find products that meet your requirement.