GTRB264318FC-V1

Note : Your request will be directed to Wolfspeed, A Cree Company.

GTRB264318FC-V1 Image

The GTRB264318FC from Wolfspeed is a GaN on SiC HEMT that operates from 2500 to 2700 MHz. It provides an output power (P3dB) of 400 W with a gain of 15 dB and an efficiency of 53%. The transistor requires a supply of 48 V. This pulsed device has a pulse width of 10 µs and a duty cycle of 10%. It is available in a thermally enhanced package with an earless flange and is ideal for multi-standard cellular power amplifier applications.

Product Specifications

View similar products

Product Details

  • Part Number
    GTRB264318FC-V1
  • Manufacturer
    Wolfspeed, A Cree Company
  • Description
    400 W GaN on SiC HEMT from 2500 to 2700 MHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Cellular
  • Application
    Multi-standard cellular power amplifier applications
  • CW/Pulse
    CW, Pulse
  • Frequency
    2.5 to 2.7 GHz
  • Power
    56.02 dBm (P3dB)
  • Power(W)
    400 W (P3dB)
  • Gain
    15 dB
  • Efficiency
    53 Percent
  • Class
    Class 1B
  • Features
    Low thermal resistance, Human Body Model Class 1B (per ANSI/ESDA/JEDEC JS-001), Broadband internal matching
  • Supply Voltage
    48 V
  • Lead Free
    Yes
  • RoHS
    Yes
  • Grade
    Commercial