GTRB266908FC-V1

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GTRB266908FC-V1 Image

The GTRB266908FC-V1 from Wolfspeed is a High-Electron-Mobility Transistor (HEMT) that operates from 2515 to 2675 MHz. It delivers an output power of 500 W (P3dB) with a gain of 15 dB and has an efficiency of 52%. This transistor is manufactured using a Gallium-Nitride (GaN) on Silicon Carbide (SiC) process and requires a DC supply of 48 V. It is available in a surface-mount thermally-enhanced package with earless flange and can be used in multi standard cellular power amplifier applications.

Product Specifications

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Product Details

  • Part Number
    GTRB266908FC-V1
  • Manufacturer
    Wolfspeed
  • Description
    500 W GaN-on-SiC HEMT from 2515 to 2675 MHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Cellular
  • Application
    Multi-standard cellular power amplifier applications
  • CW/Pulse
    Pulse
  • Frequency
    2.515 to 2.675 GHz
  • Power
    57 dBm (P3)
  • Power(W)
    501.19 W
  • OIP3
    500 to 549 W
  • Pulsed Width
    10 us
  • Duty_Cycle
    10 %
  • Gain
    15 dB
  • Efficiency
    52 to 69.2 %
  • Supply Voltage
    48 V
  • Package Type
    Earless Flange
  • RoHS
    Yes
  • Grade
    Commerical