GTVA101K42EV-V1 Image

GTVA101K42EV-V1

Note : Your request will be directed to Wolfspeed, A Cree Company.

The GTVA101K42EV-V1 from Wolfspeed is a GaN on SiC HEMT that operates from 960 to 1215 MHz. It provides a peak output power of 1400 W (P3dB) and a gain of 17 dB while operating from 50 V supply. This Pulsed CW device has a pulse width 128 µs and duty cycle of 10%. It is available in a thermally-enhanced surface mount package with bolt-down flange and is ideal for use in multi-standard cellular power amplifier applications.

Product Specifications

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Product Details

  • Part Number
    GTVA101K42EV-V1
  • Manufacturer
    Wolfspeed, A Cree Company
  • Description
    1400 W GaN on Sic HEMT from 960 to 1215 MHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Aerospace & Defence
  • CW/Pulse
    CW, Pulse
  • Frequency
    960 to 1215 MHz
  • Power
    61.46 dBm
  • Power(W)
    1400 W
  • Pulsed Width
    128 us
  • Duty_Cycle
    10 %
  • Gain
    17 dB
  • Efficiency
    68 %
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Drain Leakage Current (Id)
    5 mA
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degrees C

Technical Documents

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