GTVA104001FA-V1 Image

GTVA104001FA-V1

RF Transistor by Wolfspeed, A Cree Company (75 more products)

Note : Your request will be directed to Wolfspeed, A Cree Company.

The GTVA104001FA-V1 from Wolfspeed is a GaN on SiC High Electron Mobility Transistor that operates from 960 to 1215 MHz. It provides an output power of 400 W and a gain of 19 dB while operating from 50 V supply. This Pulsed CW device has a pulse width 128 µs and duty cycle of 10%. It is available in a thermally-enhanced surface mount package with earless flange.

Product Specifications

    Product Details

    • Part Number :
      GTVA104001FA-V1
    • Manufacturer :
      Wolfspeed, A Cree Company
    • Description :
      400 W GaN on SiC HEMT from 960 to 1215 MHz

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • CW/Pulse :
      CW, Pulse
    • Frequency :
      960 to 1215 MHz
    • Power :
      56.02 dBm
    • Pulsed Width :
      128 us
    • Gain :
      19 dB
    • Supply Voltage :
      50 V
    • Drain Efficiency :
      70 %
    • RoHS :
      Yes

    Technical Documents

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