GTVA107001EC-V1 Image

GTVA107001EC-V1

RF Transistor by Wolfspeed, A Cree Company (76 more products)

Note : Your request will be directed to Wolfspeed, A Cree Company.

The GTVA107001EC-V1 from Wolfspeed is a GaN on SiC HEMT that operates from 960 to 1215 MHz. It provides a peak output power of 890 W (P3dB) and a gain of 18 dB while operating from 50 V supply. This Pulsed/CW device has a pulse width 128 µs and duty cycle of 10%. It is available in a thermally-enhanced surface mount package with bolt-down flange and is ideal for avionics applications. The GTVA107001EC-V1 is capable of withstanding a 10:1 load mismatch (all phase angles) at 700 W peak power under pulse conditions: 50 V, 100 mA IDQ, 128 µs pulse width and 10% duty cycle.

Product Specifications

    Product Details

    • Part Number :
      GTVA107001EC-V1
    • Manufacturer :
      Wolfspeed, A Cree Company
    • Description :
      890 W GaN on SiC HEMT from 960 to 1215 MHz

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Aerospace & Defence
    • Application :
      Avionics
    • CW/Pulse :
      CW, Pulse
    • Frequency :
      960 to 1215 MHz
    • Power :
      58.45 dBm
    • Power(W) :
      700 W
    • Gain :
      20 dB
    • Supply Voltage :
      50 V
    • Breakdown Voltage - Drain-Source :
      150 V
    • Drain Efficiency :
      67 to 70 %
    • Drain Leakage Current (Id) :
      12 mA
    • RoHS :
      Yes

    Technical Documents

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