GTVA261802FC Image

GTVA261802FC

Note : Your request will be directed to Wolfspeed, A Cree Company.

The GTVA261802FC from Wolfspeed is a GaN on SiC HEMT that operates from 2620 to 2690 MHz. This pulsed CW Transistor provides an output power (P3dB) of 170 watts with a gain of 15 dB and has a drain efficiency of 65.5%, while operating from a 48 V supply. It has a pulse width of 10 µs and a duty cycle of 10%. The transistor is available in a thermally enhanced package with an earless flange and is ideal for use in multi-standard telecom/cellular applications.

Product Specifications

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Product Details

  • Part Number
    GTVA261802FC
  • Manufacturer
    Wolfspeed, A Cree Company
  • Description
    170 W GaN on SiC HEMT from 2620 to 2690 MHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Cellular
  • Application
    WCDMA
  • CW/Pulse
    Pulse, CW
  • Frequency
    2.62 to 2.69 GHz
  • Power
    52.3 dBm (P3dB), 52.55 dBm (CW)
  • Power(W)
    170 W (P3dB), 180 W (CW)
  • Pulsed Width
    10 uS
  • Duty_Cycle
    10%
  • Gain
    15 to 16.8 dB
  • VSWR
    1.10:1
  • Class
    Class 1A, Class AB
  • Supply Voltage
    0 to 50 V
  • Threshold Voltage
    -3.8 to -2.3 V (Gate)
  • Breakdown Voltage - Drain-Source
    150 V
  • Current
    160 mA
  • Drain Efficiency
    40 to 65.5%
  • Drain Leakage Current (Id)
    1.5 mA
  • Junction Temperature (Tj)
    225 Degree C
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Adjacent Channel Power Ratio : -27 to -24.5 dBc

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