GTVA262701FA

RF Transistor by Wolfspeed, A Cree Company | Visit website (103 more products)

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The GTVA262701FA from Wolfspeed, A Cree Company is a RF Transistor with Frequency 2.62 to 2.69 GHz, Power 54.31 dBm, Power(W) 270 W, Duty_Cycle 10%, Gain 16.5 to 18.1 dB. More details for GTVA262701FA can be seen below.

Product Specifications

    Product Details

    • Part Number :
      GTVA262701FA
    • Manufacturer :
      Wolfspeed, A Cree Company
    • Description :
      Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Cellular
    • Application :
      WCDMA
    • CW/Pulse :
      Pulse, CW
    • Frequency :
      2.62 to 2.69 GHz
    • Power :
      54.31 dBm
    • Power(W) :
      270 W
    • Pulsed Width :
      10 uS
    • Duty_Cycle :
      10%
    • Gain :
      16.5 to 18.1 dB
    • Power Added Effeciency :
      66%
    • VSWR :
      1.10:1
    • Class :
      Class 1B, Class AB
    • Supply Voltage :
      48 V
    • Threshold Voltage :
      -3.8 to -2.3 V (Gate)
    • Breakdown Voltage - Drain-Source :
      150 V
    • Drain Efficiency :
      40 to 42%
    • Drain Leakage Current (Id) :
      4.5 mA
    • Junction Temperature (Tj) :
      225 Degree C
    • RoHS :
      Yes
    • Storage Temperature :
      -65 to 150 Degree C
    • Note :
      Operating Voltage : 0 to 50 V, Gate Quiescent Voltage : -3 V, Adjacent Channel Power Ratio : -28 to -27 dBc, Output PAR : 5.5 to 6.2 dB

    Technical Documents

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