GTVA262701FA Image

GTVA262701FA

Note : Your request will be directed to Wolfspeed, A Cree Company.

The GTVA262701FA from Wolfspeed is a GaN on SiC High Electron Mobility Transistor that operates from 2620 to 2690 MHz. It provides an output power of 270 W with a gain of 18.1 dB and an efficiency of 66%, while operating from 48 V supply. This Pulsed / CW device has a pulse width of 10 µs and a duty cycle of 10%. It is available in a surface-mount package with earless flange and is ideal for use in multi-standard cellular power amplifier applications. This HEMT is ideal for Wireless Infrastructure applications and is capable of handling 10:1 VSWR @48 V, 60 W (WCDMA) output power.

Product Specifications

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Product Details

  • Part Number
    GTVA262701FA
  • Manufacturer
    Wolfspeed, A Cree Company
  • Description
    270 W GaN on SiC HEMT from 2620 to 2690 MHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Cellular
  • Application
    WCDMA, 5G
  • CW/Pulse
    Pulse, CW
  • Frequency
    2.62 to 2.69 GHz
  • Power
    54.31 dBm
  • Power(W)
    270 W
  • Pulsed Width
    10 uS
  • Duty_Cycle
    10%
  • Gain
    16.5 to 18.1 dB
  • Power Added Effeciency
    66%
  • VSWR
    1.1:1
  • Class
    Class 1B, Class AB
  • Supply Voltage
    48 V
  • Threshold Voltage
    -3.8 to -2.3 V (Gate)
  • Breakdown Voltage - Drain-Source
    150 V
  • Drain Efficiency
    40 to 42%
  • Drain Leakage Current (Id)
    4.5 mA
  • Junction Temperature (Tj)
    225 Degree C
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

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