Note : Your request will be directed to Wolfspeed, A Cree Company.
The GTVA262701FA from Wolfspeed is a GaN on SiC High Electron Mobility Transistor that operates from 2620 to 2690 MHz. It provides an output power of 270 W with a gain of 18.1 dB and an efficiency of 66%, while operating from 48 V supply. This Pulsed / CW device has a pulse width of 10 µs and a duty cycle of 10%. It is available in a surface-mount package with earless flange and is ideal for use in multi-standard cellular power amplifier applications. This HEMT is ideal for Wireless Infrastructure applications and is capable of handling 10:1 VSWR @48 V, 60 W (WCDMA) output power.
850 W GaN-on-SiC Power Transistor from 400 to 450 MHz
280 W GaN HEMT from 1.03 to 1.09 GHz
35 W LDMOS Power Transistor from 1 to 650 MHz
25 W Unmatched GaN Transistor from DC to 5 GHz
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