GTVA311801FA-V1 Image

GTVA311801FA-V1

RF Transistor by Wolfspeed, A Cree Company | Visit website (103 more products)

Note : Your request will be directed to Wolfspeed, A Cree Company.

The GTVA311801FA-V1 from Wolfspeed is a GaN on SiC High Electron Mobility Transistor that operates from 2700 to 3100 MHz. It provides an output power of 180 W and a gain of 15 dB while operating from 50 V supply. This Pulsed CW device has a pulse width of 300 µs and a duty cycle of 10%. It is available in a thermally-enhanced surface mount package with earless flange.

Product Specifications

    Product Details

    • Part Number :
      GTVA311801FA-V1
    • Manufacturer :
      Wolfspeed, A Cree Company
    • Description :
      180 W GaN on SiC HEMT from 2700 to 3100 MHz

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Radar
    • CW/Pulse :
      CW, Pulse
    • Frequency :
      2700 to 3100 MHz
    • Power :
      52.55 dBm
    • Power(W) :
      180 W
    • Gain :
      15 dB
    • Supply Voltage :
      50 V
    • Breakdown Voltage - Drain-Source :
      150 V
    • Drain Efficiency :
      70 %
    • Package Type :
      Earless Flanged
    • RoHS :
      Yes
    • Storage Temperature :
      -65 to 150 Degrees C

    Technical Documents

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