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RF Transistor by Wolfspeed (65 more products)

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The CGH09120F is a 120 W, Gallium Nitride (GaN) high electron mobility transistor (HEMT) that operates from 800 MHz to 2.5 GHz. The transistor has a gain of 21 dB and an efficiency of 35% making it ideal for high efficiency, wideband amplifier applicat

Product Specifications

  • Part Number
  • Manufacturer
  • Description
    120 W, UHF to 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM Applications
  • Transistor Type
  • Application Industry
    Wireless Infrastructure
  • Features
    Broadband Transistor
  • Grade
    Military, Commercial
  • Frequency
    UHF to 2.5 GHz
  • Gain
    21 dB
  • Power
    120 W
  • Supply Voltage
    28 V
  • Power Added Effeciency
    35 %
  • Package Type
    Flanged, Ceramic
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