PTRA095908NB

Note : Your request will be directed to Wolfspeed.

PTRA095908NB Image

The PTRA095908NB from Wolfspeed is an RF LDMOS Transistor that operates from 925 to 960 MHz. It provides an output power (P3dB) of 520 W with a gain of 19 dB and has a drain efficiency of 52%. This FET requires a DC supply of 48 V. The PTRA095908NB is available in a thermally-enhanced plastic overmold package with an earless flange for cool and reliable operation and is ideal for multi-standard cellular power amplifier applications.

Product Specifications

View similar products

Product Details

  • Part Number
    PTRA095908NB
  • Manufacturer
    Wolfspeed
  • Description
    520 W Thermally-Enhanced LDMOS Transistor from 925 to 960 MHz

General Parameters

  • Transistor Type
    LDMOS, FET
  • Technology
    Si
  • Application Industry
    Cellular
  • CW/Pulse
    CW, Pulse
  • Frequency
    925 to 960 MHz
  • Power
    57.16 dBm (P3dB)
  • Power(W)
    520 W (P3dB)
  • P1dB
    160 to 400 W
  • Duty_Cycle
    10 %
  • Power Gain (Gp)
    16.8 to 17.5 dB
  • Class
    AB
  • Supply Voltage
    48 V
  • Breakdown Voltage - Drain-Source
    105 V
  • Current
    500 mA
  • Drain Efficiency
    49.5 to 52 %
  • Drain Leakage Current (Id)
    1 to 10 uA
  • Gate Leakage Current (Ig)
    1 uA
  • Lead Free
    Yes
  • Junction Temperature (Tj)
    225 Degree C
  • Package Type
    Earless Flanged
  • Package
    PG-HB2SOF-6-1
  • RoHS
    Yes
  • Operating Temperature
    0 to 55 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents