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The PTVA101K02EV-V1 from Wolfspeed is an RF LDMOS Transistor that operates from 1030 to 1090 MHz. It provides an output power of 1000 watts with a power gain of 18 dB and a PAE of 65% while operating from a 50 V DC supply. This pulsed device has a pulse width of 128 µs and a duty cycle of 10%. It is capable of withstanding a 10:1 load mismatch under MODE-S pulse conditions and exhibits low thermal resistance. The transistor is available with ESD protection in a thermally enhanced package with a bolt-down flange and is Pb-Free and RoHS Compliant.
13.8 W Doherty GaN Power Transistor from 2.3 to 2.4 GHz for 5G Base Stations
400 W, GaN on SiC HEMT from DC to 2.9 GHz
410 W Doherty GaN-on-SiC HEMT from 3700 to 4100 MHz
10 W Surface-Mount GaN HEMT from DC to 8 GHz
450 W GaN-on-SiC HEMT from 758 to 960 MHz
56 W GaN-on-SiC HEMT from 3700 to 3980 MHz
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