PXAE183708NB

RF Transistor by Wolfspeed, A Cree Company | Visit website (103 more products)

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The PXAE183708NB from Wolfspeed, A Cree Company is a RF Transistor with Frequency 1.805 to 1.88 GHz, P1dB 320 W, OIP3 160 to 430 W, Duty_Cycle 10%, Gain 13.5 to 16 dB. More details for PXAE183708NB can be seen below.

Product Specifications

    Product Details

    • Part Number :
      PXAE183708NB
    • Manufacturer :
      Wolfspeed, A Cree Company
    • Description :
      Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 1805 – 1880 MHz

    General Parameters

    • Transistor Type :
      LDMOS, FET
    • Application Industry :
      Cellular
    • Application :
      WCDMA
    • CW/Pulse :
      Pulse, CW
    • Frequency :
      1.805 to 1.88 GHz
    • P1dB :
      320 W
    • Peak Output Power :
      315 W
    • OIP3 :
      160 to 430 W
    • Pulsed Width :
      10 uS
    • Duty_Cycle :
      10%
    • Gain :
      13.5 to 16 dB
    • VSWR :
      1.10:1
    • Class :
      Class AB
    • Supply Voltage :
      28 V
    • Breakdown Voltage - Drain-Source :
      65 V
    • Drain Efficiency :
      48 to 60%
    • Drain Leakage Current (Id) :
      1 to 10 uA
    • Gate Leakage Current (Ig) :
      1 uA
    • Junction Temperature (Tj) :
      225 Degree C
    • On Resistance :
      0.08 Ohms
    • RoHS :
      Yes
    • Storage Temperature :
      -65 to 150 Degree C
    • Note :
      Operating Voltage : 1.5 to 3.3 V (Gate), Adjacent Channel Power Ratio : -29.5 to -25 dBc, Output PAR : 6.8 to 7.7 dB

    Technical Documents

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