GD080

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GD080 Image

The GD080 from Gallium Semiconductor is a RF Transistor with Frequency DC to 3.7 GHz, Power 50 dBm, Power(W) 100 W, Saturated Power 80 to 100 W, Gain 14.5 to 15.5 dB. Tags: Die. More details for GD080 can be seen below.

Product Specifications

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Product Details

  • Part Number
    GD080
  • Manufacturer
    Gallium Semiconductor
  • Description
    80 W GaN on SiC HEMT from DC to 3.7 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN, GaN on SiC
  • Application Industry
    Cellular, Radar
  • Application
    Communication, Test Instrumentation
  • CW/Pulse
    CW, Pulse
  • Frequency
    DC to 3.7 GHz
  • Power
    50 dBm
  • Power(W)
    100 W
  • Saturated Power
    80 to 100 W
  • Gain
    14.5 to 15.5 dB
  • Supply Voltage
    50 V
  • Threshold Voltage
    -3 to -1.3 VGS (V)
  • Breakdown Voltage
    150 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Voltage - Gate-Source (Vgs)
    -8 to 2 V
  • Drain Efficiency
    54 to 60 %
  • Drain Leakage Current (Id)
    0.94 mA
  • Quiescent Drain Current
    100 mA
  • Junction Temperature (Tj)
    225 Degree C
  • Package Type
    Die
  • Dimension
    2.72 x 0.75 mm
  • RoHS
    Yes
  • Grade
    Commercial, Military, Space
  • Storage Temperature
    -65 to 150 Degree C

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