GD090

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GD090 Image

The GD090 from Gallium Semiconductor is a RF Transistor with Frequency DC to 3.7 GHz, Power 50.41 dBm, Power(W) 109.9 W, Saturated Power 90 to 110 W, Gain 14 to 15.5 dB. Tags: Die. More details for GD090 can be seen below.

Product Specifications

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Product Details

  • Part Number
    GD090
  • Manufacturer
    Gallium Semiconductor
  • Description
    90 W GaN on SiC HEMT from DC to 3.7 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN, GaN on SiC
  • Application Industry
    Cellular, Radar
  • Application
    Communication, Test Instrumentation
  • CW/Pulse
    CW, Pulse
  • Frequency
    DC to 3.7 GHz
  • Power
    50.41 dBm
  • Power(W)
    109.9 W
  • Saturated Power
    90 to 110 W
  • Gain
    14 to 15.5 dB
  • Supply Voltage
    50 V
  • Threshold Voltage
    -3 to -1.3 VGS (V)
  • Breakdown Voltage
    150 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Voltage - Gate-Source (Vgs)
    -8 to 2 V
  • Drain Efficiency
    52 to 60 %
  • Drain Leakage Current (Id)
    1.09 mA
  • Quiescent Drain Current
    100 mA
  • Junction Temperature (Tj)
    225 Degree C
  • Package Type
    Die
  • Dimension
    3.08 x 0.75 mm
  • RoHS
    Yes
  • Grade
    Commercial, Military, Space
  • Storage Temperature
    -65 to 150 Degree C

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