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The GD090 from Gallium Semiconductor is a RF Transistor with Frequency DC to 3.7 GHz, Power 50.41 dBm, Power(W) 109.9 W, Saturated Power 90 to 110 W, Gain 14 to 15.5 dB. Tags: Die. More details for GD090 can be seen below.
150 W GaN-on-SiC Power Transistor from 3.3 to 3.8 GHz
Gan Wideband Doherty Power Transistor from 3.3 to 3.7 GHz
300 W High-Efficiency GaN Amplifier from 2.4 to 2.5 GHz
275 W GaN Asymmetrical Doherty HEMT from 1880 to 2025 MHz
100 W GaN-on-SiC Transistor from 2400 to 2500 MHz
275 W Asymmetrical Doherty GaN HEMT from 1805 to 1880 MHz
347 W GaN Power Transistor from 2.3 to 2.5 GHz
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