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The GD090 from Gallium Semiconductor is a RF Transistor with Frequency DC to 3.7 GHz, Power 50.41 dBm, Power(W) 109.9 W, Saturated Power 90 to 110 W, Gain 14 to 15.5 dB. Tags: Die. More details for GD090 can be seen below.
410 W, GaN on SiC HEMT from 3.7 to 4.1 GHz
450 W GaN-on-SiC HEMT from 758 to 960 MHz
700 W GaN HEMT from 0.9 to 1.4 GHz for Avionics Application
500 W GaN HEMT from 2.7 to 3.1 GHz for S-Band Radar Applications
25 W LDMOS FET from 500 to 1400 MHz
6 W GaN Transistor Die from 10 MHz to 18 GHz
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