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The GD300 from Gallium Semiconductor is a RF Transistor with Frequency DC to 2.9 GHz, Saturated Power 300 W, Gain 18 dB, Supply Voltage 50 V, Breakdown Voltage - Drain-Source 150 V. Tags: Die. More details for GD300 can be seen below.
13.8 W Doherty GaN Power Transistor from 2.3 to 2.4 GHz for 5G Base Stations
400 W, GaN on SiC HEMT from DC to 2.9 GHz
410 W Doherty GaN-on-SiC HEMT from 3700 to 4100 MHz
410 W GaN-on-SiC HEMT from 3600 to 3800 MHz
500 W GaN-on-SiC HEMT from 2515 to 2675 MHz
25 W Surface-Mount LDMOS FET from 500 to 1400 MHz
50 W GaN-on-SiC HEMT from 2515 to 2675 MHz
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